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| NIF62514 Preferred Device Self-protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor's latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source Clamp. Features http://onsemi.com 6.0 AMPERES* 40 VOLTS CLAMPED RDS(on) = 90 mW Drain Overvoltage Protection MPWR * * * * * * * * * Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Protection Low RDS(on) IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection Pb-Free Packages are Available Gate Input RG ESD Protection Temperature Limit Current Limit Current Sense Source 4 Unit Vdc Vdc 1 2 3 MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Internally Clamped Drain-to-Gate Voltage Internally Clamped (RGS = 1.0 MW) Gate-to-Source Voltage Drain Current - Continuous @ TA = 25C - Continuous @ TA = 100C - Pulsed (tp 10 ms) Total Power Dissipation @ TA = 25C (Note 1) @ TA = 25C (Note 2) @ TA = 25C (Note 3) Thermal Resistance, Junction-to-Tab Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Single Pulse Drain-to-Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, VDS = 40 Vdc, IL = 2.8 Apk, L = 80 mH, RG = 25 W) Operating and Storage Temperature Range Symbol VDSS VDGR VGS ID ID IDM PD Value 40 40 "16 SOT-223 CASE 318E STYLE 3 MARKING DIAGRAM Vdc 1 GATE AYW 62514 G G 2 DRAIN 3 SOURCE C/W A = Assembly Location Y = Year W = Work Week 62514 = Specific Device Code G = Pb-Free Package (Note: Microdot may be in either location) 4 DRAIN Internally Limited 1.1 1.73 8.93 14 114 72.3 300 W RqJT RqJA RqJA EAS mJ TJ, Tstg -55 to 150 C ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted onto min pad board. 2. Mounted onto 1 pad board. 3. Mounted onto large heatsink. (c) Semiconductor Components Industries, LLC, 2006 *Limited by the current limit circuit. Publication Order Number: NIF62514/D 1 April, 2006 - Rev. 5 NIF62514 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) (VGS = 0 Vdc, ID = 250 mAdc, TJ = 150C) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150C) Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) (VGS = -5.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 150 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 4) (VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 25C) (VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 150C) Static Drain-to-Source On-Resistance (Note 4) (VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 25C) (VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 150C) Source-Drain Forward On Voltage (IS = 7 A, VGS = 0 V) SWITCHING CHARACTERISTICS Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Slew-Rate On Slew-Rate Off 10% Vin to 10% ID RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V 10% ID to 90% ID RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V 90% Vin to 90% ID RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V 90% ID to 10% ID RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V td(on) trise td(off) tfall -dVDS/dton dVDS/dtoff - - - - - - 4.0 11 32 27 1.5 0.6 8.0 20 50 50 2.5 1.0 ms ms ms ms ms ms VGS(th) 1.0 - RDS(on) - - RDS(on) - - VSD - 105 185 1.05 120 210 - V 90 165 100 190 mW 1.7 4.0 2.0 6.0 Vdc mV/C mW V(BR)DSS 42 42 IDSS - - IGSS - - 50 550 100 1000 0.5 2.0 2.0 10 mAdc 46 45 50 50 Vdc mAdc Symbol Min Typ Max Unit SELF PROTECTION CHARACTERISTICS (TJ = 25C unless otherwise noted) Current Limit Current Limit Temperature Limit (Turn-off) Temperature Limit (Circuit Reset) Temperature Limit (Turn-off) Temperature Limit (Circuit Reset) (VGS = 5.0 Vdc) (VGS = 5.0 Vdc, TJ = 150C) (VGS = 10 Vdc) (VGS = 10 Vdc, TJ = 150C) VGS = 5.0 Vdc VGS = 5.0 Vdc VGS = 10 Vdc VGS = 10 Vdc ILIM ILIM TLIM(off) TLIM(on) TLIM(off) TLIM(on) 6.0 3.0 7.0 4.0 150 135 150 130 9.0 5.0 10.5 7.5 175 160 155 140 11 8.0 13 10 200 185 185 170 Adc Adc C C C C ESD ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Electro-Static Discharge Capability Electro-Static Discharge Capability Human Body Model (HBM) Machine Model (MM) ESD ESD 4000 400 - - - - V V 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. http://onsemi.com 2 NIF62514 TYPICAL ELECTRICAL CHARACTERISTICS 12 ID, DRAIN CURRENT (AMPS) 10 8 5V 6 4 2 0 0 1 2 3 4 3V TJ = 25C 5 6 4V VGS = 10 V 7V 6V ID, DRAIN CURRENT (AMPS) 8 TJ = 150C 7 VGS = 10 V 6 5 5V 4 3 2 1 0 0 1 2 3 4 5 6 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 4V 3V 7V 6V VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. Output Characteristics 14 ID, DRAIN CURRENT (AMPS) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ = -40C 3V VGS = 10 V 5V 4V ID, DRAIN CURRENT (AMPS) 12 Figure 2. Output Characteristics VDS = 5 V 10 8 6 4 TJ = 150C 2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TJ = 25C TJ = -40C 7V 6V Figure 3. Output Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) Figure 4. Transfer Characteristics 250 225 200 175 150 125 100 75 50 25 0 -50 Typical Maximum VGS = 10 V ID = 1.4 A 250 225 200 175 150 125 100 75 50 25 0 -50 Typical VGS = 5 V ID = 1.4 A Maximum -25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 5. Drain-to-Source Resistance versus Junction Temperature Figure 6. Drain-to-Source Resistance versus Junction Temperature http://onsemi.com 3 NIF62514 IDSS, DRAIN-TO-SOURCE LEAKAGE CURRENT (mA) 4 GATE THRESHOLD VOLTAGE (V) VDS = 32 V 3 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 -50 -30 -10 10 30 50 70 90 110 130 150 VTH - 4 Sigma VTH + 4 Sigma VTH ID = 150 mA 2 1 Typical 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) TEMPERATURE (C) Figure 7. Drain-to-Source Resistance versus Junction Temperature Figure 8. Gate Threshold Voltage versus Temperature 12 Current Limit DRAIN CURRENT (AMPS) 10 VGS = 10 V 8 6 VGS = 5 V 4 2 0 0 1 2 3 4 5 TIME (ms) Temperature Limit Figure 9. Short-circuit Response R(t), TRANSIENT THERMAL RESISTANCE (C/W) 100 Duty Cycle = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 P(pk) t1 t2 Single Pulse 0.1 0.00001 0.0001 0.001 0.01 t,TIME (S) 0.1 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 TJ(pk) - TA = P(pk) RqJA(t) RqJC @ R(t) for t 0.02 s 1 10 Figure 10. Transient Thermal Resistance (Non-normalized Junction-to-Ambient mounted on minimum pad area) http://onsemi.com 4 NIF62514 ORDERING INFORMATION Device NIF62514T1 NIF62514T1G NIF62514T3G Package SOT-223 SOT-223 (Pb-Free) SOT-223 (Pb-Free) 1000 / Tape & Reel 4000 / Tape & Reel Shipping For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NIF62514 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE L D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - 4 HE 1 2 3 E b e1 e q C DIM A A1 b b1 c D E e e1 L1 HE A 0.08 (0003) A1 q MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0 MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0 MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10 L1 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NIF62514/D |
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